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 1.5V Drive Nch MOSFET
RUF020N02
Structure Silicon N-channel MOSFET Dimensions (Unit : mm)
TUMT3
Features 1) Low On-resistance. 2) Space saving, small surface mount Package (TUMT3). 3) Low voltage drive (1.5V drive).
(1) Gate (2) Source (3) Drain
Abbreviated symbol : XK
Applications Switching
Inner circuit
(3)
Packaging specifications
Package Type RUF020N02 Code Basic ordering unit (pieces) Taping TL 3000
1 (2) 1 ESD PROTECTION DIODE 2 BODY DIODE (1) 2
0.2Max.
(1) Gate (2) Source (3) Drain
Absolute maximum ratings (Ta=25C)
Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipation Channel temperature Range of storage temperature
1 Pw10s, Duty cycle1% 2 When mounted on a ceramic board
Continuous Pulsed Continuous Pulsed
Symbol VDSS VGSS ID IDP 1 IS ISP 1 PD 2 Tch Tstg
Limits 20 10 2 6 0.6 6 0.8 150 -55 to +150
Unit V V A A A A W C C
Thermal resistance
Parameter Channel to ambient
When mounted on a ceramic board
Symbol Rth(ch-a)
Limits 156
Unit C/W
www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved.
1/4
2009.06 - Rev.A
RUF020N02
Electrical characteristics (Ta=25C)
Parameter Symbol IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge
Pulsed
Data Sheet
RDS (on)
Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd

Min. - 20 - 0.3 - - - - 1.8 - - - - - - - - - -
Typ. - - - - 75 95 130 170 - 180 45 25 6 17 30 30 2.0 0.6 0.4
Max. 10 - 1 1.0 105 135 185 240 - - - - - - - - - - -
Unit A V A V m m m m S pF pF pF ns ns ns ns nC nC nC
Conditions VGS=10V, VDS=0V ID= 1mA, VGS=0V VDS= 20V, VGS=0V VDS= 10V, ID= 1mA ID= 2A, VGS= 4.5V ID= 2A, VGS= 2.5V ID= 1A, VGS= 1.8V ID= 0.4A, VGS= 1.5V VDS= 10V, ID= 2A VDS= 10V VGS=0V f=1MHz VDD 10V ID= 1A VGS= 4.5V RL 10 RG=10 VDD 10V, ID= 2A VGS= 4.5V RL 5, RG=10
Body diode characteristics (Source-drain) (Ta=25C)
Parameter Forward voltage
Pulsed
Symbol VSD
Min. -
Typ. -
Max. 1.2
Unit V
Conditions IS= 2A, VGS=0V
www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved.
2/4
2009.06 - Rev.A
RUF020N02
Electrical characteristics curves
4 Ta=25C Pulsed DRAIN CURRENT : ID [A] VGS= 10V VGS= 4.5V VGS= 2.5V VGS= 1.8V 2 VGS= 1.5V VGS= 1.3V 1 4 VGS= 4.5V VGS= 2.5V VGS= 1.8V Ta=25C Pulsed DRAIN CURRENT : ID [A] 10 VDS= 10V Pulsed Ta= 125C Ta= 75C Ta= 25C Ta= - 25C
Data Sheet
DRAIN CURRENT : ID [A]
3
3
1
VGS= 1.5V 2
0.1
1
VGS= 1.3V VGS= 1.2V
0.01
VGS= 1.2V 0 0 0.2 0.4 0.6 0.8 1 0 0 2 4 6
0.001 8 10 0 0.5 1 1.5 2
DRAIN-SOURCE VOLTAGE : VDS[V] Fig.1 Typical Output Characteristics()
DRAIN-SOURCE VOLTAGE : VDS[V] Fig.2 Typical Output Characteristics()
GATE-SOURCE VOLTAGE : VGS[V] Fig.3 Typical Transfer Characteristics
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on)[m]
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on)[m]
1000
Ta=125C Ta=75C Ta=25C Ta= -25C
100
100
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on)[m]
Ta= 25C Pulsed
1000
VGS= 1.5V VGS= 1.8V VGS= 2.5V VGS= 4.5V
VGS= 4.5V Pulsed
1000
VGS= 2.5V Pulsed
Ta=125C Ta=75C Ta=25C Ta= -25C
100
10 0.01
0.1
1
10
10 0.01
0.1
1
10
10 0.01
0.1
1
10
DRAIN-CURRENT : ID [A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current()
DRAIN-CURRENT : ID [A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current()
DRAIN-CURRENT : ID [A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current()
1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m]
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on)[m]
VGS= 1.8V Pulsed
1000 Ta=125C Ta=75C Ta=25C Ta= -25C
VGS= 1.5V Pulsed FORWARD TRANSFER ADMITTANCE : |Yfs| [S]
10
VDS= 10V Pulsed
100
100
Ta=125C Ta=75C Ta=25C Ta= -25C
1 Ta= -25C Ta=25C Ta=75C Ta=125C
10 0.01
0.1
1
10
10 0.01
0.1
1
10
0.1 0.01
0.1
1
10
DRAIN-CURRENT : ID [A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current()
DRAIN-CURRENT : ID [A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current()
DRAIN-CURRENT : ID [A] Fig.9 Forward Transfer Admittance vs. Drain Current
www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved.
3/4
2009.06 - Rev.A
RUF020N02
REVERSE DRAIN CURRENT : Is [A] 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m] VGS=0V Pulsed 300 250 200 150 100 50 tr 0 0 0.5 1 1.5 0 2 4 6 8 10 1 0.01 0.1 1 10 ID = 2.0A ID = 1.0A Ta=25C Pulsed SWITCHING TIME : t [ns] 1000 td (off) tf 100 Ta=25C VDD = 10V VGS=4.5V RG=10 Pulsed
Data Sheet
1
0.1
Ta=125C Ta=75C Ta=25C Ta=-25C
10
td (on)
0.01
SOURCE-DRAIN VOLTAGE : VSD [V] Fig.10 Reverse Drain Current22 vs. Sourse-Drain Voltage
GATE-SOURCE VOLTAGE : VGS[V] Fig.11 Static Drain-Source On-State Resistance vs. Gate Source Voltage
DRAIN-CURRENT : ID [A] Fig.12 Switching Characteristics
5 GATE-SOURCE VOLTAGE : VGS [V]
1000 Ciss CAPACITANCE : C [pF]
Ta=25C VDD = 10V ID = 2A 4 RG=10 Pulsed 3
100
Coss
2
1 10 0 0.5 1 1.5 2 2.5 3
0
Ta=25C f=1MHz VGS=0V 0.01 0.1
Crss
1
10
100
DRAIN-SOURCE VOLTAGE : VDS[V] TOTAL GATE CHARGE : Qg [nC] Fig.13 Dynamic Input Characteristics Fig.14 Typical Capacitance vs. Drain-Source Voltage
Measurement circuit
Pulse Width
VGS
ID
VDS
VGS 50% 10% 10%
90%
50% 10%
RL D.U.T. RG VDD
VDS
90% td(on) ton tr td(off) toff
90% tr
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
VG
VGS ID VDS RL IG (Const.) RG D.U.T. VDD
Qg VGS Qgs Qgd
Charge
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit.
www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved.
4/4
2009.06 - Rev.A
Notice
Notes
No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law.
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R0039A


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